Fabrication of PbS Quantum dots and Silicon Device for Near-Infrared detection

Abstract

Imaging devices for near-infrared wavelengths on silicon large scale integration (LSI) are very attractive for secure applications. We here demonstrate an LSI-compatible hybrid IR detector by integrating PbS quantum dots the... [ view full abstract ]

Authors

  1. Akio Higo (VDEC, The Univ. of Tokyo)
  2. Hai-bin Wang (RCAST, The Univ. of Tokyo)
  3. Takaya Kubo (RCAST, The Univ. of Tokyo)
  4. Naoto Usami (Dep. of EEIS, The Univ. of Tokyo)
  5. Yuki Okamoto (Dep. of EEIS, The Univ. of Tokyo)
  6. Kentaro Yamada (Dep. of EEIS, The Univ. of Tokyo)
  7. Hiroshi Segawa (RCAST, The Univ. of Tokyo)
  8. Masakazu Sugiyama (RCAST, The Univ. of Tokyo)
  9. Yoshio Mita (Dep. of EEIS, The Univ. of Tokyo)

Topic Areas

Quantum phenomena: transduction, information, communication , Nanofabrication, packaging and integration

Session

Mo-1 » Silicon Photonics (09:15 - Monday, 14th August, Sierra/Cumbre/Vista)

Paper

AH_OMN2017v4.pdf