Power Device and Module Technologies for Distributed Energy

It is expected in the near future that distributed energies such as photovoltaics, wind powers, and micro turbines will have significant impacts on the energy markets. In this prospect, specific power electronics precisely... [ view full abstract ]

It is expected in the near future that distributed energies such as photovoltaics, wind powers, and micro turbines will have significant impacts on the energy markets. In this prospect, specific power electronics precisely controlled by power semiconductor devices are requested to convert the generated power into useful powers, in generation, distribution, and efficient use of electrical energy.

In this paper, newly developed Reverse Blocking (RB) IGBT is firstly described which realizes a T-type neutral-point-clamped (T-NPC) 3-level topology with bidirectional switches, and applied for a power conditioner in a wind turbine generator system. The system with a capacity of 500kVA proves to fits with grid and achieves a good efficiency of as high as 97.6%. This paper also includes topics relating to other silicon power device technologies which relate with distributed energy applications.

To date, wide band gap power devices are attractive in the power electronics markets because of their superior performance. In this paper, technologies of silicon carbide power devices and modules are also up-dated. The proposed package improves reliability approximately 30 to 100 times better than conventional packages at a temperature range from 125 to 150℃. These technologies will boost up performance of power electronic systems in the areas of future distributed energy.