Session: Tue-3C
Power Semiconductor Devices

Chair

Alex Huang

Time

15:00 - 16:30 on Tuesday, 23rd of June 2015

Venue

Berlin 3

15:20

The new high power density 7th generation IGBT module for compact power conversion systems

Eri Ogawa (Fuji Electric Co., Ltd.), Junya Kawabata (Fuji Electric Co., Ltd.), Yoshiyuki Kusunoki (Fuji Electric Co., Ltd.), Yuichi Onozawa (Fuji Electric Co., Ltd.), Yoshitaka Nishimura (Fuji Electric Co., Ltd.), Yasuyuki Kobayashi (Fuji Electric Co., Ltd.), Osamu Ikawa (Fuji Electric Co., Ltd.)
15:40

A Photoconductive Semiconductor Switch Vertically Embedded with MISFETs for High-Power High-Repetition-Rate Application

X. Wang (Xi’an University of Technology), Sudip Mazumder (University of Illinois, Chicago)
16:00

Avoiding Reverse Recovery Effects in Super Junction MOSFET based Half Bridges

Marcus Conrad (RWTH Aachen), Rik W. De Doncker (RWTH Aachen)