Session: Tue-3C
Power Semiconductor Devices

Alex Huang
15:00 - 16:30 on Tuesday, 23rd of June 2015
Berlin 3
  • 15:20
    The new high power density 7th generation IGBT module for compact power conversion systems
    Eri Ogawa (Fuji Electric Co., Ltd.), Junya Kawabata (Fuji Electric Co., Ltd.), Yoshiyuki Kusunoki (Fuji Electric Co., Ltd.), Yuichi Onozawa (Fuji Electric Co., Ltd.), Yoshitaka Nishimura (Fuji Electric Co., Ltd.), Yasuyuki Kobayashi (Fuji Electric Co., Ltd.), Osamu Ikawa (Fuji Electric Co., Ltd.)
  • 15:40
    A Photoconductive Semiconductor Switch Vertically Embedded with MISFETs for High-Power High-Repetition-Rate Application
    X. Wang (Xi’an University of Technology), Sudip Mazumder (University of Illinois, Chicago)
  • 16:00
    Avoiding Reverse Recovery Effects in Super Junction MOSFET based Half Bridges
    Marcus Conrad (RWTH Aachen), Rik W. De Doncker (RWTH Aachen)