Complex defects in AlN/GaN interface

Abstract

The influence of complex defects (gallium, nitrogen and aluminum vacancies and corresponding interstitial atoms) in AlN/GaN heterointerface characteristics are discussed. The density functional theory calculations with the... [ view full abstract ]

Authors

  1. Yahor Lebiadok (SSPA “Optics, Optoelectronics & Laser Technology”)
  2. Dzmitry Kabanau (SSPA “Optics, Optoelectronics & Laser Technology”)

Topic Area

Qunatum dots & quantum wells

Session

PS3 » Poster Session (13:30 - Friday, 11th November, Gallery)

Presentation Files

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