Effects of the compliance current on the resistive switching behavior of arsenic telluride thin films

Abstract

Introduction 3D X-point array structure has attracted increasing attention for high-density resistive memory devices, but 3D X-point array structure with a purely linear resistive switching element suffers from sneak current... [ view full abstract ]

Authors

  1. Taeho Kim (Yonsei University/Semiconductor Memory Lab/Materials Science & Engineering)
  2. hyunchul Sohn (Yonsei University/Semiconductor Memory Lab/Materials Science & Engineering)
  3. Jinyeol Lee (Yonsei University/Semiconductor Memory Lab/Materials Science & Engineering)
  4. Dayoon Lee (Yonsei University/Semiconductor Memory Lab/Materials Science & Engineering)
  5. Jaeyeon Kim (Yonsei University/Semiconductor Memory Lab/Materials Science & Engineering)

Topic Areas

Nanoelectronic systems, components & devices , Optical properties of nanostructures , Spectroscopy

Session

PS1 » Poster Session (13:30 - Wednesday, 18th October, Hall & Room 3)

Presentation Files

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