High performance nanowire based field effect transistors for sensing applications

Abstract

Field effect transistors are omnipresent electronic devices with applications ranging from microprocessors to biosensors. New and improved architectures are sought with the aim in exploiting functionalities obtained from... [ view full abstract ]

Authors

  1. Camelia Florica (National Institute of Materials Physics)
  2. Andreea Costas (National Institute of Materials Physics)
  3. Nicoleta Preda (National Institute of Materials Physics)
  4. Elena Matei (National Institute of Materials Physics)
  5. Ionut Enculescu (National Institute of Materials Physics)

Topic Area

Nanoelectronic systems, components & devices

Session

OS1a-2 » Nanoelectronic systems, components and devices (14:30 - Wednesday, 18th October, Room 2)

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