Design and Test of W-Band Passive Circuit Components in 28nm Bulk CMOS Technology

In the frame of the design of a low noise amplifier for W-band applications, pads, inductors, and other circuit components such as capacitors, coplanar waveguides and interconnect lines have been custom designed in a 28 nm... [ view full abstract ]

In the frame of the design of a low noise amplifier for W-band applications, pads, inductors, and other circuit components such as capacitors, coplanar waveguides and interconnect lines have been custom designed in a 28 nm bulk CMOS technology and simulated by means of 3D electromagnetic (EM) simulator. In particular, this paper reports the design and test of stand-alone pads, capacitor and inductor that have been fabricated and measured in order to validate the design methodology at all levels, from components to circuit and from simulations to experimental tests. Overall, the results confirm the effectiveness of the design and test methodologies adopted at component and circuit levels.