Design Issues and Characterization of a GaInNAs-based Resonance Cavity Enhanced Photodetector

We report a resonant-cavity-enhanced novel GaInNAs-based photodetector, designed to be operated at optical communication window of 1.3 µm. Transfer-matrix method was used to design the structure of the device. 7 nm-thick... [ view full abstract ]

We report a resonant-cavity-enhanced novel GaInNAs-based photodetector, designed to be operated at optical communication window of 1.3 µm. Transfer-matrix method was used to design the structure of the device. 7 nm-thick nine (Sb) / quantum wells were used as the absorption layers and 15 and 10-pairs GaAs/AlAs-distributed Bragg reflectors were grown as the bottom and top mirrors, respectively. All measurements were carried out at a temperature range from 5 to 40 oC in order to investigate characteristic of cavity resonance. The quantum efficiency is determined to be in the range of 10% (at 5 oC) to 32% (at 40 oC). An excellent wavelength selectivity is observed and changed from 3.4 nm (at 5 oC) to 6 nm (at 40 oC). Our results reveal that properties of RCEPD is quite sensitive to temperature changes due to the difference in the temperature dependence of DBRs and bandgap of absorption layer.