Light Emission from Al0.08Ga0.92As Gunn Device


We report light emission characteristic of a waveguided Al0.08Ga0.92As Gunn Device, which consists of an n =4.6x1017 cm-3 doped Al0.08Ga0.92As active layer sandwiched between the undoped Al0.32Ga0.68As waveguiding layers grown... [ view full abstract ]


  1. Caglar Cetinkaya (istanbul university)
  2. Selman Mutlu (istanbul university)
  3. Omer Donmez (istanbul university)
  4. Ayşe Erol (istanbul university)

Topic Area

Enhanced devices: lasers, nano antennas, solar cells, LEDs, photonic crystal fibers…


PS2 » Poster Session (13:30 - Thursday, 8th December, Tipi)

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