Influence of complex defects in AlGaAs/GaAs interface on registration efficiency of quantum well infrared photodetector


The influence of complex defects (gallium, arsenic and aluminum vacancies with corresponding interstitial atoms) in Al0.3Ga0.7As/GaAs heterointerface on focal plane array quantum well infrared photodetector (FPA QWIP)... [ view full abstract ]


  1. Yahor Lebiadok (SSPA "Optics, Optoelectronics & Laser Technology")
  2. Elena Shalaeva (SSPA "Optics, Optoelectronics & Laser Technology")

Topic Areas

Optical properties of nanostructures , Besides the visible (UV and Mid-IR)


PS3 » Poster Session (13:30 - Friday, 9th December, Tipi)

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