GaN/AlN Interface Characteristics in Presence of Point Defects


The geometry of point defects in the GaN/AlN interface was calculated in the framework of the cluster approach. The calculations were carried out using two methods: first-principles Hartree-Fock method and the density... [ view full abstract ]


  1. Yahor Lebiadok (SSPA “Optics, Optoelectronics & Laser Technology")
  2. Tatsyana Bezyazychnaya (Institute of Physical Organic Chemistry)
  3. Ivan Alexandrov (Rzhanov Institute of Semiconductor Physics)
  4. Konstantin Zhuravlev (Rzhanov Institute of Semiconductor Physics)

Topic Area

Optical properties of nanostructures


PS2 » Poster Session (13:30 - Thursday, 14th September, Gallery)

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