Optical Parameters of GaInAsSb Laser Diodes and Its Application for Carbon Monoxide Detection

The optical and energy characteristics of laser diodes with quantum active layer GaInAsSb lasing in the range of 2.30-2.35 μm are analyzed in this report. The active region of the laser under investigation consists of two... [ view full abstract ]

The optical and energy characteristics of laser diodes with quantum active layer GaInAsSb lasing in the range of 2.30-2.35 μm are analyzed in this report. The active region of the laser under investigation consists of two strained Ga_0.65In_0.35As_0.11Sb_0.89 quantum wells, each is of 10 nm thick. The thicknessof waveguide layers made of AlGaAsSb is equal to 375 nm. Waveguide layers are bounded by wide-gap layers of p- and n-AlGaAsSb. The energy diagram of the laser structures under consideration is shown in Fig. 1.

The bandgap energy temperature dependence was obtained for Ga_0.65In_0.35As_0.11Sb_0.89 on the base of luminescence spectra (see Fig.1).

The lasing spectra of the laser diode with double quantum well and its temperature dependence were investigated in detail with the purpose of carbon monoxide detection (see Fig. 2).

The bandgap calculation method, lasing and amplified luminescence spectra are discussed in the report.

This work was partially supported by BRFFR, grant F17М-087