CMOS Process Compatible Visible-Blind Ultraviolet Phototransistors

We propose an interdigitated Si lateral bipolar phototransistor integrated with an Al-SiO2-Al (metal-dielectric-metal structure) visible-blind ultraviolet Fabry-Pérot bandpass filter. The maximum optical transmittance is 0.56... [ view full abstract ]

We propose an interdigitated Si lateral bipolar phototransistor integrated with an Al-SiO₂-Al (metal-dielectric-metal structure) visible-blind ultraviolet Fabry-Pérot bandpass filter. The maximum optical transmittance is 0.56 at the wavelength 332nm, and the FWHM of transmission is 78.6 nm. And we successfully demonstrated suppression of visible light with the highest responsivity 9.78×10^-2 (A/W) at wavelength of 350 nm.