Energy-Efficient Silicon Photonic Crystal Nanocavity Modulator Driven by Indium Oxide Gate

We report an ultra-energy-efficient silicon photonic crystalnanocavity modulator driven by a metal-oxide-semiconductor (MOS) capacitorconsisting of In2O3/HfO2/p-Sistacked film, which yields an ultra-high tuning efficiency of... [ view full abstract ]

We report an ultra-energy-efficient silicon photonic crystalnanocavity modulator driven by a metal-oxide-semiconductor (MOS) capacitorconsisting of In₂O₃/HfO₂/p-Sistacked film, which yields an ultra-high tuning efficiency of 250pm/V, astrong modulation strength of 4dB/V by a 0.35µm electrode, and a low energyconsumption of 3fJ/bit.