Stress Engineered Coupling of IR Inactive Mode in CMOS Metamaterial Structures

We report high temperature (up to 400 deg.) coupling of infrared (IR) inactive >C=C< mode in CMOS compatible refractory metamaterial filter and absorber structure by leveraging the carbon defects in TEOS (Tetraethyl... [ view full abstract ]

We report high temperature (up to 400 deg.) coupling of infrared (IR) inactive >C=C< mode in CMOS compatible refractory metamaterial filter and absorber structure by leveraging the carbon defects in TEOS (Tetraethyl orthosilicate) obtained PECVD SiO₂ thin film for the first time in the literature. Here, we confirm the role of strain gradient induced dipole moment in high stress configuration on the activation of otherwise inactive >C=C< vibration at IR.