Characterizing Slow state Near Si-SiO2 in MOS structure

The Equilibrium Voltage Step (EVS) techniquehas been used for extraction of depth and energy concentration profile of trapssituated in the oxide of a lightly stressed metal-oxide-semiconductor (MOS)structure. This has been... [ view full abstract ]

The Equilibrium Voltage Step (EVS) techniquehas been used for extraction of depth and energy concentration profile of trapssituated in the oxide of a lightly stressed metal-oxide-semiconductor (MOS)structure. This has been achieved up to the very near Si-SiO₂ interface. The results are discussed andcompared with those obtained using charge pumping (CP) technique. A goodagreement is achieved between the trap densities extracted using the twomethods even though differences in the shape of the profiles can be observed. Theresults also very well agree with those published previously using current deeplevel transient spectroscopy (C-DLTS).