Ag-ion implantation of silicon

Andrey Stepanov

Kazan Physical-Technical Institute RAS

A.L. Stepanov received the Ph.D. and Dr. Sci. degrees from the Kazan Federal University, Russia. Since 1992, he is working in Kazan E.K. Zavoisky Physical-Technical Institute of Russian Academy of Sciences and at present he is a Heard of Nanooptics and nanoplasmonics group. In 1997-1999, he was grated by the Royal Society/NATO Fellowships, in 1999 to 2003, - by the Alexander von Humboldt Foundation and DFG, in 2003-2004 - by Lise Meitner Fellowship from Austrian Scientific Society, in 2011 by the DAAD, in German, in 2013 by the Slovak Academic Information Agency. His Hirsch index is 31.


Porous materials have attracted remarkable concerns and found tremendous importance widespread in both fundamental research and industrial applications. Such materials could be widely used for variety applications as... [ view full abstract ]


  1. Andrey Stepanov (Kazan Physical-Technical Institute RAS)
  2. Vladimir Stepanov (Kazan)
  3. Valery Valeev (Kazan Physical-Technical Institute RAS)
  4. Viacheslav Vorobev (Kazan Physical-Technical Institute RAS)
  5. Yury Osin (Kazan Physical-Technical Institute RAS)
  6. Alexey Rogov (Kazan Physical-Technical Institute RAS)

Topic Area

Si - Advanced synthesis and characterization


PS3 » Poster Session (13:30 - Wednesday, 5th July, Main hall)

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