Transparent conductive film is used as an essential component especially in display devices, such as organic light emitting diodes (OLEDs), and also in solar cells. The most common material is indium tin oxide (ITO). On the... [ view full abstract ]
Transparent conductive film is used as an essential component especially in display devices, such as organic light emitting diodes (OLEDs), and also in solar cells.
The most common material is indium tin oxide (ITO). On the other hand, indium is a rare metal, therefore, indium free or indium saving transparent conductive films are preferable. Recently, transparent conductive multilayers which consist of top and bottom metal oxide layers and thin metal (such as Ag) interlayer have been proposed. These multilayers can achieve a low sheet resistance due to the metal interlayer, therefore the use of indium can be also reduced, even if ITO is used.
We have reported a very high (68 x 10-3 Ω-1) figure of merit (FOM) of a multilayer consists of indium zinc oxide (IZO) and Ag interlayer (namely, IAI). An OLED where the IAI multilayer was applied showed an excellent device performance. In this study, a multilayer consists of top and bottom MoO3 layers and Ag interlayer is prepared on glass substrates by vacuum evaporation method. Transmittance and sheet resistance of the structures are evaluated and the optimum structure is found to be MAM (20/14/30 nm), showing the best FOM, 6.2 x 10-3 Ω-1, among the samples, though this value is much lower than that of the IAI multilayer. We also attempt to fabricate a multilayer consists of MoO3 layer, Ag interlayer, and IZO layer (namely, MAI). The obtained MAI (50/14/30 nm) multilayer shows higher FOM, 32 x 10-3 Ω-1, than MAM and a higher indium-saving feature than IAI.
Nanoelectronic systems, components & devices , Photovoltaics and solar cells at nanoscale , Nanotechnology for environment and energy
