Surface Modification of Porous Silicon Carbide by formation of a Functionalized Polymer
Abstract
In recent years, the functionalization of porous silicon carbide surfaces by macromolecules constitutes an attractive approach for designing novel microsystems for numerous applications; such as electrochromic devices,... [ view full abstract ]
In recent years, the functionalization of porous silicon carbide surfaces by macromolecules constitutes an attractive approach for designing novel microsystems for numerous applications; such as electrochromic devices, rechargeable batteries, electromagnetic interference shielding, and sensors for detection of toxic gases. The advantages of these polymeric / silicon carbide nanostructures are there ease of fabrication, a high sensitivity and the most important is their room temperature operation. The characterization of polymer chains onto porous silicon carbide has received increasing attention mainly due to the possibility of controlling and modifying the properties of the porous material.
In this work, we explain the electrodeposion of PANI doped with two acids on porous silicon carbide. The nanostructured porous silicon carbide layers were formed by the electrochemical etch in appropriate ratio of components in the HF/H2O/H2O2 solution, under a current constant source
The deposited of polymeric films on the porous silicon surface were confirmed by Fourier transform infrared spectroscopy (FTIR), which displayed the principal characteristic peaks attributed to the different functional groups. In addition, scanning electron microscopy (SEM) was used to characterize the surface morphology of the material. The structure has been used for ammoniac (NH3) vapor detection. The results show that the synthesized film exhibits a nanofibrous texture with a good sensitive against NH3 vapor with a good response time as 9 s and a recovery time 2 s for a low NH3 concentration.
Authors
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Lamia TALBI
(USTHB/CRTSE/CMSI)
Topic Area
Nanosensors
Session
PS2 » Poster Session (13:30 - Thursday, 19th October, Hall & Room 3)
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