A study on double-gate spin MOSFETs
Abstract
Double-gate spin MOSFET has been proposed by taking advantage of the double-gate technology in CMOS devices. One gate can be used as a signaling gate and the other gate can be used as a magnetic storage gate. The simulation... [ view full abstract ]
Authors
- Kazuhiko Endo (AIST)
- Wataru Mizubayashi (Advanced Industrial Science and Technology)
Topic Area
Topics: Novel device physics and materials
Session
PS-1 » Poster Session (19:00 - Monday, 17th October, Ballroom Foyer)
