A Nanoscale NbO2 Mott Memristor as a Source of Chaos for Computation

We have built and characterized sub-100 nm NbO2 memristors that exhibited two distinct regions of negative differential resistance in their quasi-DC i-v characteristics: current controlled and temperature controlled. We... [ view full abstract ]

We have built and characterized sub-100 nm NbO2 memristors that exhibited two distinct regions of negative differential resistance in their quasi-DC i-v characteristics: current controlled and temperature controlled. We constructed Pearson-Anson-like oscillators using these devices and observed a range of distinctly accessible sinusoidal and highly chaotic oscillations generated by applying a variable DC voltage. The voltage-tunable locally active behavior of these devices provides a new route to chaotic and emergent behavior in transistor-less electronic circuits.