A Nanoscale NbO2 Mott Memristor as a Source of Chaos for Computation

Abstract

We have built and characterized sub-100 nm NbO2 memristors that exhibited two distinct regions of negative differential resistance in their quasi-DC i-v characteristics: current controlled and temperature controlled. We... [ view full abstract ]

Authors

  1. R. Stanley Williams (Hewlett Packard Enterprise Labs)

Topic Area

Topics: Nonlinear Dynamical Systems and Edge of Chaos

Session

WS-01 » Wild and Crazy Ideas (WACI) (19:00 - Tuesday, 18th October, Del Mar Ballroom AB)

Paper

Stan.pdf

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