Reliable, sustainable and easy to implement large scale patterning techniques are nowadays of great need. Indeed controlling location, size, shape and orientation are key points to achieve desired properties. Few complementary techniques such as electron beam lithography, nano-imprint or laser interference lithography, exist for controlled patterning down to the nanoscale. Full control at the large scale of a multifunctional material like Zinc Oxide (ZnO) is of great interest for the research community, it is considered for many applications due to its unique properties. It is a wide electronic bandgap semiconductor (3.4 eV) [1] which possesses a large exciton binding energy (60 meV) [2] and demonstrates a high optical gain [3]. Hence, ZnO appears as a good candidate for short wavelength optoelectronic devices such as LEDs [4] lasers or photodetectors [5]. His sensitivity to its environment makes ZnO suitable as sensor [6]. Electron beam lithography has shown well controlled structuring properties but is limited regarding to the size of the pattern area and requires huge amount of time to achieve few square millimeters. On the other hand, laser interference lithography needs the deposition of a photoresist mask which is first patterned before the etching of ZnO. In this study we will present a new technique on direct patterning of ZnO using holography [7]. The parametric study of the photodissolution process allowed kinetics to achieve up to 30 nm/sec for 1 cm² patterned area making the technique compatible with large scale and fast direct patterning.
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