Influence of complex defects in AlGaAs/GaAs interface on registration efficiency of quantum well infrared photodetector

The influence of complex defects (gallium, arsenic and aluminum vacancies with corresponding interstitial atoms) in Al0.3Ga0.7As/GaAs heterointerface on focal plane array quantum well infrared photodetector (FPA QWIP)... [ view full abstract ]

The influence of complex defects (gallium, arsenic and aluminum vacancies with corresponding interstitial atoms) in Al0.3Ga0.7As/GaAs heterointerface on focal plane array quantum well infrared photodetector (FPA QWIP) characteristics are discussed. The wavelength corresponding to the maximal abortion of QWIP is in the vicinity of 8.5 μm. The density functional theory calculations with the hybrid functionals B3LYP with Hay-Wadt effective core potentials for all the heavy atoms in a combination with Hay-Wadt valence basis were used. The model clusters of AlxGa1-xAs/GaAs interface with the mixing of gallium and aluminum atoms in the range of 0 - 100 % are under consideration.