Interface defects and silicon impurities in AlGaAs/GaAs heterostructures and its relationship to registration efficiency of quantum well infrared photodetector

The influence of complex defects (gallium, arsenic and aluminum vacancies with corresponding interstitial atoms) in Al0.3Ga0.7As/GaAs heterointerface on quantum well infrared photodetector (QWIP) characteristics as well as... [ view full abstract ]

The influence of complex defects (gallium, arsenic and aluminum vacancies with corresponding interstitial atoms) in Al_0.3Ga_0.7As/GaAs heterointerface on quantum well infrared photodetector (QWIP) characteristics as well as “passivation” of the defects by silicon impurities are discussed in the report. The wavelength corresponding to the maximal abortion of QWIP is in the vicinity of 8.5-8.6 μm. The density functional theory calculations with the hybrid functionals B3LYP with Hay-Wadt effective core potentials for all the heavy atoms in a combination with Hay-Wadt valence basis were used. The energy characteristics (formation energy) and geometry of the defects (spatial distribution of the atoms and its charge near the interface defect) are presented in the report.