Interface defects and silicon impurities in AlGaAs/GaAs heterostructures and its relationship to registration efficiency of quantum well infrared photodetector


The influence of complex defects (gallium, arsenic and aluminum vacancies with corresponding interstitial atoms) in Al0.3Ga0.7As/GaAs heterointerface on quantum well infrared photodetector (QWIP) characteristics as well as... [ view full abstract ]


  1. Yahor Lebiadok (SSPA “Optics, Optoelectronics & Laser Technology")
  2. Alena Shalayeva (SSPA “Optics, Optoelectronics & Laser Technology")

Topic Area

Optical properties of nanostructures


PS2 » Poster Session (13:30 - Thursday, 14th September, Gallery)

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