All optical band engineering of Dirac materials

We demonstrate theoretically that the interaction between electrons in Dirac materials and a strong off-resonant electromagnetic field (dressing field) substantially renormalizes different parameters of the band structure of... [ view full abstract ]

We demonstrate theoretically that the interaction between electrons in Dirac materials and a strong off-resonant electromagnetic field (dressing field) substantially renormalizes different parameters of the band structure of Dirac materials (such as monolayer graphene, bilayer graphene, Transition Metal Dichalchogenides). Moreover, we show that different effects strongly depend on the polarization of the field. Namely, an example of the found features is the opening of a gap in graphene with the circularly polarized light whereas with a linear polarization we observe a modification of the Fermi velocity [1]. Another example is the closure of the gap and the modification of the spin splitting in both valence and conduction bands in TMDC materials using linearly polarized light [2]. As a consequence the dressing field can serve as an effective tool to control spin and valley properties of Dirac materials and be potentially exploited in optoelectronic applications.

[1]: K. Kristinsson, O. V. Kibis, S. Morina, I. A. Shelykh, Sci Rep. 6 20082 (2016)

[2]: O. V. Kibis, K. Dini, I. V. Iorsh, I. A. Shelykh, Phys. Rev. B 95, 125401 (2017)