Anomalous Hall effect and magnetic properties of GaMnSb thin films grown by DC Magnetron co-Sputtering for spintronics applications

This work presents a study of the magnetic properties and Hall effect measurements on diluted magnetic semiconductors (GaMn)Sb obtained by DC magnetron co-sputtering method. Synthesis parameters, like substrate temperature... [ view full abstract ]

This work presents a study of the magnetic properties and Hall effect measurements on diluted magnetic semiconductors (GaMn)Sb obtained by DC magnetron co-sputtering method. Synthesis parameters, like substrate temperature (T_s), and deposition time (t_d) were varied while the magnetron power deposition applied to both targets, and the work pressure (WP) were kept constant. The values for t_d were 10 and 15 min; for T_s, these values were 423 and 523 K. The Mn₂Sb₂ and Mn₂Sb phases were identified through the X-ray diffraction measurements. The influence of synthesis parameters on the magnetic properties and Hall effect are discussed. Magnetization (M) studies as function of the applied magnetic field (H) at different temperatures (50, 150, and 300 K) were also performed. The paramagnetic and diamagnetic behavior, accompanied by the ferrimagnetic and ferromagnetic phases in two samples was evidenced through hysteresis curves. The Hall effect was used to establish carrier density (n_p) values between 3.19 x 10^-15 cm^-3 and 2.86 x 10²⁰ cm^-3, consequently, the anomalous Hall effect was observed