Raman scattering for InAsSb

The InAs1–xSbx ternary alloy band gap nonlinearly depends on the composition, which gives the opportunity to use this material in devices operating in a wide range of infrared radiation [1–2]. We present experimental... [ view full abstract ]

The InAs_1–xSb_x ternary alloy band gap nonlinearly depends on the composition, which gives the opportunity to use this material in devices operating in a wide range of infrared radiation [1–2]. We present experimental results for InAs_1–xSb_x samples for Sb composition from 0.1 to 0.8. Raman spectrum of InAs and InSb in the range of 20 - 250 cm^-1 exhibits two main LO peaks and 2TA peak [4,5]. On the other hand in the range 20-250 for InAsSb in Raman spectra two additional peaks (44cm^-1 and 140cm^-1) are present, while they are not exsiting neither in pure InAs nor in InSb. 44cm^-1 and 140cm^-1 are close to phonon energy for momentum equals K for InAs. In this case in Raman scattering not only gamma point is active, but also K point.