Hot carriers on organic semiconductors: relating mechanics and electronic properties

Hot Electron Nanonscopy and spectroscopy (HENs) is a recently developed technique relying on the unbiased emission of energetic electrons at a Schottky junction after plasmon decay, once excited by an impinging laser... [ view full abstract ]

Hot Electron Nanonscopy and spectroscopy (HENs) is a recently developed technique relying on the unbiased emission of energetic electrons at a Schottky junction after plasmon decay, once excited by an impinging laser excitation. Recently we employed this technique with an AFM based architecture to exploit the nanometric spatial resolution and controlled interaction on several inorganic semiconductor and 2D materials, proofing an extremely high efficiency in hot carriers generation and high spatial resolution. Here we show the first application to p-doped organic semiconductor, broadening the range of applicability to a new class of materials where conductance is dominated by holes. At the same time this studies pave the way to the possibility to study hot carriers conduction under controlled strain and deformation, and the influence of morphology on conductance. For this reason we have coupled a Raman detection channel to the plasmon photonic decay channel at the tip to provide structural information aside of the conductive/ spectroscopic one.