Plasmon-induced in-plane band gap engineering in hydrogenated dilute nitrides

Giorgio Pettinari


Giorgio Pettinari is a researcher at the Institute for Photonics and Nanotechnologies of the National Research Council of Italy. He got a Ph.D. in Materials Science from Sapienza University of Rome (Italy; 2008) and was an assistant researcher at the Radboud University of Nijmegen (The Netherlands; 2009-2011) and a Marie Curie Research Fellow at the University of Nottingham (UK; 2011-2013). His interests range from the experimental investigation of semiconductor nanostructures to micro- and nano-fabrication and investigation of photonic and plasmonic devices. He published >40 peer-reviewed papers, 2 invited book chapters, and given >20 oral contributions and seminars (7 invited).


Dilute nitrides (such as GaAsN, GaPN, and InGaAsN) are III-V semiconductors alloying small, yet macroscopic (≤ 5%) percentages of nitrogen atoms. One of the most striking property of this class of materials is the... [ view full abstract ]


  1. Giorgio Pettinari (CNR IFN)
  2. Loris Angelo Labbate (CNR IFN)
  3. Silvia Rubini (CNR IOM)
  4. Antonio Polimeni (Sapienza University of Rome)
  5. Marco Felici (Sapienza University of Rome)

Topic Areas

Photonic & plasmonic nanomaterials , Quantum dots and colour centres


OS3a-2 » Quantum dots and colour centres (14:30 - Wednesday, 3rd October, ROOM 2)

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