Optical properties of III-V nanostructures for optoelectronic applications

Nabiha Ben Sedrine

Departamento de Física e I3N, Universidade de Aveiro, Portugal

Nabiha Ben Sedrine (NBS) is a Researcher at the University of Aveiro and I3N/Aveiro. Her research interests are devoted to study key issues of nanostructures for optoelectronic and photovoltaic applications: III-V dilute nitrides/antimonides/bismides (GaAsN, GaAsSb, GaAsBi); III-V (GaAs, InP), group-III-nitride (GaN, InN, AlN, BN, YN and allloys), oxydes (TiO2, NiO, ZnO) and alloys. NBS completed her PhD degree in Physics 2009, since then, she pursued several post-doctoral positions in Portugal and Sweden. NBS has a recognized expertise in optical characterization of materials using different spectroscopic techniques (SE, PL, PL excitation, Raman, lifetimes) and structural/surface characterization techniques (HRXRD, AFM, SEM).

Abstract

Introduction                Since the successful development of quantum well lasers in the 1970s, one of the richest areas of application of semiconductor nanostructures is the area of optoelectronics, such as... [ view full abstract ]

Authors

  1. Nabiha Ben Sedrine (Departamento de Física e I3N, Universidade de Aveiro, Portugal)
  2. J. Cardoso (Departamento de Física e I3N, Universidade de Aveiro, Portugal)
  3. J. Rodrigues (Departamento de Física e I3N, Universidade de Aveiro, Portugal)
  4. J. P. Teixeira (Departamento de Física e I3N, Universidade de Aveiro, Portugal)
  5. A. Alves (Departamento de Física e I3N, Universidade de Aveiro, Portugal)
  6. R. Ribeiro-andrade (INL – International Iberian Nanotechnology Laboratory, Braga, Portugal & Departamento de Física, Universidade Federal de Minas Gerais, Brazil)
  7. A. Gustafsson (Solid State Physics and NanoLund, Lund University, Sweden)
  8. P. M. P. Salomé (INL – International Iberian Nanotechnology Laboratory, Braga, Portugal)
  9. J. C. Gonzàlez (Departamento de Física, Universidade Federal de Minas Gerais, Brazil)
  10. D. Nd. Faye (IPFN, Instituto Superior Técnico, Campus Tecnológico e Nuclear, Bobadela LRS, Portugal)
  11. M. Belloeil (Univ. Grenoble Alpes & CEA, INAC-PHELIQS Nanophysics & semiconductors group, Grenoble, France)
  12. Bruno Daudin (Univ. Grenoble Alpes & CEA, INAC-PHELIQS Nanophysics & semiconductors group, Grenoble, France)
  13. M. Bockowski (Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw, Poland)
  14. V. Hoffmann (Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Germany)
  15. M. Weyers (Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Germany)
  16. Eduardo Alves (Instituto Superior Técnico, Universidade de Lisboa)
  17. Katharina Lorenz (IPFN, Instituto Superior Técnico, Campus Tecnológico e Nuclear, Bobadela LRS, Portugal & INESC-MN, Instituto de Engenharia de Sistemas de Computadores, Lisboa, Portugal)
  18. A. J. Neves (Departamento de Física e I3N, Universidade de Aveiro, Portugal)
  19. J. P. Leitão (Departamento de Física e I3N, Universidade de Aveiro, Portugal)
  20. M. R. Correia (Departamento de Física e I3N, Universidade de Aveiro, Portugal)
  21. Teresa Monteiro (Universidade de Aveiro)

Topic Area

Optical properties of nanostructures

Session

OS1b-2 » Optical properties of nanostructures (17:05 - Monday, 1st October, ROOM 2)

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