Nanostructured Si- and Al for advanced microLED imaging

The usage of nanostructured Si- and Al in high efficient CMOS compatible microLED imaging system will be the main issue of this presentation. These systems can be incorporated in low cost high performance augmented- or... [ view full abstract ]

The usage of nanostructured Si- and Al in high efficient CMOS compatible microLED imaging system will be the main issue of this presentation.

These systems can be incorporated in low cost high performance augmented- or virtual-reality products. They can be a real alternative to well known LCOS, QLED or OLED-on-Silicon approach. 

In general, this microLED imaging system includes a matrix of a very fast electroluminescent nanoporous Si / nanostructured Al Schottki structures fabricated onto a  Si wafer using standard CMOS technology. The light emission in visible spectral range is evident.

The resolution of a microLED  imaging system can be very high due to small pixel size (in the range of 1,0 µm). Moreover, the electro optic response (switch on – switch off times) of a light emitting pixel is fast enough to address a large number of pixels in an independent manner using passive addressing technique.

In this presentation we will concentrate on the usage of novel technologies to fabricate nanostructured materials with unique features for high efficient EL- and conductive transparent layers.

 Possible areas of application in low cost high performance augmented- or virtual-reality optical devices will be also discussed.