Development of Mid-IR Ring Resonators Using Vernier Effect

We design, fabricate, and characterize two cascaded ring resonators based on Vernier effect for the application in the mid-infrared range of 3.65 μm to 4 μm. The devices are fabricated on 400nm silicon-on-insulator wafer.... [ view full abstract ]

We design, fabricate, and characterize two cascaded ring resonators based on Vernier effect for the application in the mid-infrared range of 3.65 μm to 4 μm. The devices are fabricated on 400nm silicon-on-insulator wafer. The free spectrum range of the Vernier structures is 116.2 nm and 62.6 nm and quality factor is around 4200 and 2100 respectively. Thermal tuning is also demonstrated and 7.4 nm envelope shift is observed at 2 mA.