Boron and Phosphorus Diffusion in MOS Transistors: Simulation and analyze in both 2D and 3D

Abstract

Boron Phosphorus and Arsenic atoms used as doping for the polysilicon gate they can cause crucial problem of metal-oxide- Semiconductor (MOS) devices.     In this work, in order to improve the electrical parameters of... [ view full abstract ]

Authors

  1. Guenifi Naima (University Batna, department of electronics,)
  2. Mahamdi Ramdane (Department of Electronics, University of Batna, Algeria)
  3. Rahmani Ibrahim (Department of Electronics, University of Batna, Algeria)

Topic Areas

B - Fabrication processes and applications in the industry , P - Fabrication processes and applications in the industry , Si - Fabrication processes and applications in the industry

Session

PS1 » Poster Session (13:30 - Monday, 3rd July, Main hall)

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