An algorithm For Boron diffusion in MOS transistor Using SILVACO ATHENA and Matlab
Abstract
In this work, we have developed an algorithm-implemented with Matlab based on theoretical model of boron diffusion in a highly doped poly-Si film. The numerical method used is the finite differences method. The... [ view full abstract ]
In this work, we have developed an algorithm-implemented with Matlab based on theoretical model of boron diffusion in a highly doped poly-Si film.
The numerical method used is the finite differences method. The model is validated with the help of simulation result obtained from Silvaco[7].
We obtained the profiles for the boron redistribution before and after annealing the proposed models or simulation of the boron diffusion in the poly-Si. The shoulder phenomena are observed in all case. The results obtained in both simulators are similar. Also, we have obtained a good agreement between our results and those found in literature. This theoretical study shows that technological conditions preserve the quality of the silicon oxide structure studied.
Keywords— Polysilicon; SiO2; Boron, Redistribution; finite differences method; Silvaco
Authors
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Guenifi Naima
(University Batna, department of electronics -)
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Mahamdi Ramdane
(Department of Electronics, University of Batna, Algeria)
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Rahmani Ibrahim
(Department of Electronics, University of Batna, Algeria)
Topic Area
B - Fabrication processes and applications in the industry
Session
PS3 » Poster Session (13:30 - Wednesday, 5th July, Main hall)
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