Two-dimensional simulation of nanoscale gate field-plated AlGaN/GaN heterostructure


The excellent microwave power performance demonstrated in AlGaN/GaN HEMTs (high-electron mobility transistors) results from the combination of high current density with high voltage operation [1], which benefits from the high... [ view full abstract ]


  1. Mourad Kaddeche (Département de Technologie, Faculté des Sciences et de la Technologie, Université de Djilali Bounaâma- Khemis miliana)
  2. Soltani Ali (IEMN-CNRS 8520, Université des Sciences et Technologie de Lille)
  3. Azzedine Telia (Laboratoire de Microsystème et Instrumentation (LMI), Département d’électronique, Université Mentouri de Constantine)

Topic Areas

Piezoelectrics , MEMS , Theory and modeling , (Micro)structure-property relations , Dielectric properties


PS-1C » Poster Session 1 - Symposium C (17:30 - Monday, 9th July, Foyer)

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