Raman scattering of Sm and Eu-doped ceria thin films undergoing anelastic biaxial strain relaxation


We developed a method to monitor Raman spectra of thin films undergoing biaxial strain relaxation of 0.3-0.5% and applied it to sputtered films of 10 mol% Eu and Sm doped ceria. The method is based on comparison of... [ view full abstract ]


  1. Olga Kraynis (Weizmann Institute of Science)
  2. Evgeniy Makagon (Weizmann Institute of Science)
  3. Eran Mishuk (Weizmann Institute of Science)
  4. Michal Hartstein (Weizmann Institute of Science)
  5. Igor Lubomirsky (Weizmann Institute of Science)
  6. Tsachi Livneh (Nuclear Research Center)

Topic Areas

Advanced characterisation , Defects


OS-1C » Symposium C - Advanced Characterisation (14:30 - Monday, 9th July, Panopticum Green Room)

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