The influence of defects on interfaces of semiconducting oxides


X-ray Photoelectron spectroscopy can be used to determine chemical and electronic interface properties. Chemical information obtained from this technique has a sensitivity limited to a few percent of a monolayer. In contrast,... [ view full abstract ]


  1. Andreas Klein (Institute of Materials Science, Technische Universit├Ąt Darmstadt)

Topic Areas

Defects , Interface phenomena


IL-8C » Symposium C - Defects & Functional Oxides (15:40 - Wednesday, 11th July, Panopticum Green Room)

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